| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HN2D02FUTW1T1 HN2D02FUTW1T1/D HN2D02FUTW1T1G |
Ultra High Speed Switching Diodes
Ultra High Speed Switching Diodes
|
ON Semiconductor
|
| 1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS18707 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS308 |
Ultra High Speed Switching Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| HN4D01JU-14 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS361F |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
